基于光学微谐振腔的自参考耗散克尔孤子(Dissipative Kerr Solitons, DKSs)有广泛的应用，如频率合成器、相干通信、天文光谱仪校准、精密测量、光学时钟、双梳光谱学等。倍频程DKS已在氮化硅和铌酸锂微谐振腔中实现，笔者提出了一种在氮化铝(AlN)微环谐振腔中通过单一泵浦直接产生倍频程DKS的简单方案。通过将两个谐振频率相近的模式TE₀₀ 和TE₁₀分别作为泵浦谐振和辅助谐振模式，红失谐侧的辅助模式TE₁₀可以有效地平衡孤子形成过程中的热拖曳效应。慢速扫描泵浦光波长可获得稳定的倍频程展宽的孤子梳，带宽为1100~2300 nm，孤子存在范围最大为10.4 GHz(83 pm)。这是首次在AlN平台上获得倍频程展宽的克尔光孤子。该方案在单一泵浦源下就可以获得稳定的倍频程光孤子以及宽的孤子访问窗口，不同于其他方案需要额外引入复杂的控制手段和设备。

多通道干涉大范围可调谐半导体激光器是波分复用系统中的新型关键器件，设计了一套针对此激光器高精度电流注入、温度控制、波长锁定等问题的控制系统。将该激光器的整套控制方案集成单板。在该控制系统下，测试得到激光器输出波长在1 524~1 572 nm中每间隔0.4 nm的120个ITU标准波长光谱图，调谐范围超过48 nm，并且在整个调谐范围内，边模抑制比超过了45 dB，波长偏差与ITU标准波长相差小于±10 pm，线宽小于100 kHz。

Self-referenced dissipative Kerr solitons (DKSs) based on optical microresonators offer prominent characteristics allowing for various applications from precision measurement to astronomical spectrometer calibration. To date, direct octave-spanning DKS generation has been achieved only in ultrahigh-Q silicon nitride microresonators under optimized laser tuning speed or bi-directional tuning. Here we propose a simple method to easily access the octave-spanning DKS in an aluminum nitride (AlN) microresonator. In the design, two modes that belong to different families but with the same polarization are nearly degenerate and act as a pump and an auxiliary resonance, respectively. The presence of the auxiliary resonance can balance the thermal dragging effect, crucially simplifying the DKS generation with a single pump and leading to an enhanced soliton access window. We experimentally demonstrate the long-lived DKS operation with a record single-soliton step (10.4 GHz or 83 pm) and an octave-spanning bandwidth (1100–2300 nm) through adiabatic pump tuning. Our scheme also allows for direct creation of the DKS state with high probability and without elaborate wavelength or power schemes being required to stabilize the soliton behavior.

We propose a design of single-mode orbital angular momentum (OAM) beam laser with high direct-modulation bandwidth. It is a microcylinder/microring cavity interacted with two types of second-order gratings: the complex top grating containing the real part and the imaginary part modulations and the side grating. The side grating etched on the periphery of the microcylinder/microring cavity can select a whispering gallery mode with a specific azimuthal mode number, while the complex top grating can scatter the lasing mode with travelling-wave pattern vertically. With the cooperation of the gratings, the laser works with a single mode and emits radially polarized OAM beams. With an asymmetrical pad metal on the top of the cavity, the OAM on-chip laser can firstly be directly modulated with electrical pumping. Due to the small active volume, the laser with low threshold current is predicted to have a high direct modulation bandwidth about 29 GHz with the bias current of ten times the threshold from the simulation. The semiconductor OAM laser can be rather easily realized at different wavelengths such as the O band, C band, and L band.

We experimentally demonstrated that the distributed feedback (DFB) lasers with the active distributed reflector achieved a 25.8 Gb/s operation over a wide temperature range of ?40 to 85°C. The DFB lasers can achieve additional feedback from an active distributed reflector with accurately controlled phase, and single-mode yields are not related to the position of cleave. The threshold currents of the fabricated laser are 6 mA and 20 mA at ?40°C and 85°C, respectively. The side mode suppression ratio of the fabricated laser is above 50 dB at all temperatures. Transmissions of 25.8 Gb/s after 10 km single-mode fibers with clear eye openings and less than 0.8 dB power penalty over a wide temperature range have been demonstrated as well.

A thermally tuned multi-channel interference widely tunable semiconductor laser is designed and demonstrated, for the first time to our knowledge, that realizes a tuning range of more than 45 nm, side-mode suppression ratios up to 56 dB, and Lorentzian linewidth below 160 kHz. AlGaInAs multiple quantum wells (MQWs) were used to reduce linewidth, which have a lower linewidth enhancement factor compared with InGaAsP MQWs. To decrease the power consumption of micro-heaters, air gaps were fabricated below the arm phase sections. For a 75 μm long suspended thermal tuning waveguide, about 6.3 mW micro-heater tuning power is needed for a 2π round-trip phase change. Total micro-heater tuning power required is less than 50 mW across the whole tuning range, which is lower than that of the reported thermally tuned tunable semiconductor lasers.